Principles of Solid State Devices-25772

Office Hours:         Sundays         9:30 – 10:20    

                             Tuesdays        9:30 – 10:20

Assistants:           To be announced

Course Sched.:    Saturdays  hh:mm – hh:mm   Room # Barghx

                              Mondays  hh:mm – hh:mm   Room # Bargh x

Textbook:             Ben G. Streetman, Solid States Electronic Devices, Prentice Hall.

Suppl. Text.: 1. Donald A. Neamen, Semiconductor Physics & Devices, 1997, 2. R. F. Pierret & G.W. Neudeck, Modular Series on Solid State Devices, Vol. I – V, 3. C. Kittle, Introduction to Solid State Physics (7th ed.), 1996, 4. S. Wang, Fundamentals of Semiconductor theory & Device Physics, 1989, 5. S. M. Sze, Physics of Semiconductor devices.

Course Outlines:

  1.   Crystal Structures & Growth of Semiconductors.
  2.   Foundations of Modern Electronics.
  3.   Energy Bands In Solids And Intrinsic & Extrinsic     Semiconductors.
  4. Carrier Concentrations & Conductivity In Semiconductors.
  5.   Excess Carriers and the Transport & The Recombination.
  6.   Principles of P-N Junctions and Equilibrium States.
  7.   P-N Junction Diodes and the Transient & A-C Conditions.
  8. Principles of Schottky barrier & Heterojunction based devices.
  9. S-S & M-S Special Purpose Diodes & Solar Cells.
  10. Junction Field Effect Transistors & I-V characteristics.
  11. Principles of MOSFETs structure and operation.
  12. Characteristics of MOS Field Effect Transistors.
  13. Principles of Bipolar Junction Transistors & Its Operation.
  14. BJT Biasing and Ebers-Moll model; Operational States.
  15. Principles of p-n-p-n Based Devices.
  16. Principles of HEMTs.

Grading:        HWs & Quizzes:             14%

(Tentative)     Midterm:                       38%

                       Final Exam:                   48%

                       Project:                          xx